infineon IGBT并行连接

infineonIGBT并行连接ConnectingIGBTsinParallel(Fundamentals)1IntroductionApartfromlookingforanIGBTwhichisdesignedforaparticularpowerrangethereisalsothepossibility,particularlyathighcurrents,ofconnectingtwoormoresmallerIGBTsinparallel.Noteworthyadvantagesofthisareamoreflexibleandindividualorganizationofthelayout,theheatsourcescanbedistributedsothathigherlevelsofpowerlosscanbedissipated,andpossiblyalsocostadvantagesbycomparisonwithmoduleattachments,dependingonthedevicetypeandpower.Thedisadvantageistheunequalsplitinlosses.ThemainreasonforthisliesintheunevencurrentsplitbetweendeviceswhichresultsfromdifferencesinVCEsat,gfsandVth(variabilityinparametervalues),whicharemanufacturer-dependent.