infineon FET-IGBT控制

infineonFET-IGBT控制Conductivity-ModulatedFETs-IGBTUptoareversevoltageofVDS≤200V,powerMOSFETsaresuperiorinallrespectstoanyotherswitchingdevicescomponents.WithasupplyvoltageofVB>200V,thebipolartransistorhasalowersaturationvoltage(VCEsat≤VDSon)andischeaper.Incomparisonwithabipolartransistor(assumingthesamechipdimensions),apowerMOSFETwithareversevoltageofVDS=1000VhassignificantlyhigherON-resistance,andthereforehighvoltagedropsandhighstaticlosseswhenswitchedon.ThehighON-resistanceofhigh-voltageMOSFETscanonlybereducedbymeansofalargerchipsurface.High-voltageMOSFETsarenonethelessusedinapplicationareaswheretheiradvantagesrepresentacriticalfactor:shortswitchingtime,nostoragetime,easytocontrol