infineon MOSFETS和IGBT的区别

infineonMOSFETS和IGBT的区别IGBT(InsulatedGateBipolarTransistor)1DifferencesBetweenMOSFETandIGBT1.1StructureTheIGBTcombinesinitalltheadvantagesofthebipolarandMOSfieldeffecttransistor.Ascanbeseenfromthestructuresshownbelow,theonlydifferenceliesintheadditionalp-zoneoftheIGBT.Duetothepresenceofthislayer,holesareinjectedintothehighlyresistiven-layerandacarrieroverflowiscreated.Thisincreaseinconductivityofthen-layerallowstoreducetheon-statevoltageoftheIGBT.Sourcen+AlSiO+2