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Ge on Si modulators operating at mid infrared wavelengths up to 8 μm

上传者: 2021-04-07 05:59:18上传 PDF文件 1.73MB 热度 8次
We report mid-infrared Ge-on-Si waveguide-based PIN diode modulators operating at wavelengths of 3.8 and 8?μm. Fabricated 1-mm-long electro-absorption devices exhibit a modulation depth of
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