A comparative investigation on sub micrometer InN and GaN Gunn diodes working at

We report on a simulation for wurtzite-InN and GaN Gunn diodes with notch-doping and uniform-doping structural transit regions. Results show that 0.3-1.0 mu m Gunn diodes with a diode area of 500 mu m(2) can generate fundamental frequencies of around 0.2-0.8 THz and rf currents of several hundred mA