1. 首页
  2. 数据库
  3. 其它
  4. Reduction of Reactive Ion Etching Induced Ge Surface Roughness by SF6/CF4 Cyclic

Reduction of Reactive Ion Etching Induced Ge Surface Roughness by SF6/CF4 Cyclic

上传者: 2021-02-09 10:18:43上传 PDF文件 942KB 热度 7次
Reduction of Reactive-Ion Etching-Induced Ge Surface Roughness by SF6/CF4 Cyclic Etching for Ge Fin Fabrication
下载地址
用户评论