Basal plane bending of 4H SiC single crystals grown by sublimation method with d 上传者：alxa_rjx 2021-02-07 22:19:24上传 PDF文件 1.92MB 热度 20次 Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attachment methods 下载地址 用户评论 更多下载 下载地址 立即下载 用户评论 发表评论
