凹槽栅Al2O3/AlGaN/GaNMOS HEMTs中Al2O3及刻蚀深度对2DEG面密度的影响机制
Capacitance-voltage (C-V) characteristics have been measured in this paper to calculate the depth profiles of GaN carrier concentration in four different structure GaNbased HEMTs, revealing the consequences of Al2O3 oxide layer and etching depth on two-dimensional electron gas (2DEG) sheet de
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