1.3 μm InAs/GaAs quantum dot lasers on silicon with GaInP upper cladding layers

We report on the first electrically pumped continuous-wave (CW) InAs/GaAs quantum dot (QD) laser grown on Si with a GaInP upper cladding layer. A QD laser structure with a Ga0.51In0.49P upper cladding layer and an Al0.53Ga0.47As lower cladding layer was directly grown on Si by metal–organic chemical