射频微波GaN功放管

TheRF3826isawidebandPowerAmplifierdesignedforCWandpulsedapplicationssuchaswirelessinfrastructure,RADAR,twowayradiosandgeneralpurposeamplification.UsinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess,thesehigh-performanceamplifiersachievehighefficiency,flatgainandlargein